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Silicon Carbide (SiC) Modules for Power Electronics


Our mSiC™ MOSFET and diode modules, which are available in low-profile, low-stray-inductance and baseless packaging, offer unrivaled ruggedness and performance and increase switching and thermal efficiencies in power electronics. These modules provide flexible options for electrical topology, configuration and materials to maximize your system’s performance. They are easy to integrate into higher-power systems, which simplifies a design, improves optimization and streamlines design validation.

Lowest System Cost

  • Device redundancy is not required
  • Ability to focus on the next generation of products instead of redesigning
  • No supply interruption of production

Fastest to Market

  • Minimize system development time
  • Provide earlier and more revenue
  • Accelerate your innovation process

Lowest Risk

  • Highest reliability and system lifetime
  • Lowest component count
  • Multiple epi sources and fabs

Highlights


mSiC modules streamline the integration of Silicon Carbide (SiC) into high-voltage power systems to enhance thermal management, improve system-level optimization and speed up the design validation and certification process. Our portfolio of mSiC modules optimizes performance, reliability and space savings, making them well suited for high-power applications.

Features

  • High-temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
  • Industry-leading gate oxide stability (< 100 mV Vth shift)​ and gate oxide lifetime
  • Avalanche (UIS) ruggedness (> 100k pulses)​
  • Long short-circuit withstand time​

Benefits

  • Higher switching frequency and efficiency
  • Higher power density
  • Improved ruggedness
  • Smaller and lighter systems without requiring SiC device redundancy
  • Improved cooling requirements that reduce system cost

Our Advantage

  • Multiple epi sources and dual SiC fab​s ensure long-term supply
  • Unmatched Unclamped Inductive Switching (UIS) avalanche rating
  • Longest gate oxide withstand time
  • Client-driven obsolescence practice

Custom mSiC Power Modules


We have been offering customized power modules since 1983. These power modules are made using different sub-elements, most of which are standard and can be reused to build an infinite array of solutions. We offer a complete engineered solution with mix-and-match capabilities in terms of packages, configuration, performance and cost. Our wide range of available technologies and years of expertise will help speed up your development and reduce the size and cost of your design.

Custom SiC Power Modules

Explore Our Products


Design Resources


Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting our mSiC products. Explore our comprehensive selection of time-saving SiC reference designs, development tools and resources.

Experts to Accelerate SiC Design

Evaluation and Development Kits


Silicon Carbide (SiC) Evaluation Kits and Reference Designs

Evaluation and Reference Designs

Accelerate your development of highly efficient, rugged and reliable systems while reducing your time to market with our time-saving reference designs, technology demonstrators and evaluation kits.

Hardware and Software SiC development kits

Development Kits

Our SiC development kits include the hardware and software elements required to rapidly optimize the performance of SiC modules and systems. They can accelerate your time to market by up to six months.

Need Support?


Are you considering a transition to SiC or do you want more out of your SiC-based design that is already in production?

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Contact us for SiC-based Design Support