Power MOSFETs and Small-Signal MOSFETs

You can use these MOSFETs in a DC-DC converter switch or a linear regulator pass transistor. Their mode is normally off.

High-Voltage Power MOSFETs:

• Silicon Carbide (SiC) MOSFETs
• High-Voltage Si MOSFETs 

These MOSFETs are well suited for use in the high-side switch of a power converter or in a linear regulator and CMOS switch with N-channel MOSFETs. Their mode is normally off.

You can use these MOSFETs in a start-up circuit of power supply Integrated Circuits (ICs) or a pass transistor for a linear regulator. Depletion-mode MOSFETS are switched on when zero voltage applies across the gate and the source. Their mode is normally on.

You can use these MOSFET arrays in LED-driving circuits, motor controls and relay-driving controllers.

You can use these products in motor control circuits or DC-DC converter half-bridge switches.

Our rad-hard MOSFETs feature low RDS(on) and low total gate charge. These devices have been developed for Total Dose and Single-Event environments.

MOSFETs use a vertical DMOS structure in power switches combined with a well-proven, rugged gate oxide process. There are two types of enhancement-mode MOSFETs: P channel and N channel. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. You can use lateral MOSFETs with no intrinsic body diode and often-ballasted source areas for linear mode operation amplifiers, the most prevalent of which are RF power amplifiers (e.g., LDMOS). 

These transistors also use lateral DMOS technology. The key difference is that the depletion-mode MOSFET is normally on and commanded off when V_gs increases.

N-channel MOSFETs are enhanced when the gate is pulled positive with respect to the source. N-channel MOSFETs tend to have lower RDS(on) per unit area compared to P-channel MOSFETs. In a half-bridge stage, the high-side N-channel MOSFET must have a means of holding the gate voltage positive as the device turns on. This requires a voltage above the rail, which you can derive by using bootstrapped drivers that allow a flying capacitor bank tied to the source of the high-side switch to charge when the low-side switch turns on and then flying up with the source to hold it on or with galvanically isolated drivers.  

P-channel MOSFETs are enhanced when the gate is pulled negative with respect to the source. This is often advantageous in a high-side switch application because the circuit does not require an isolated or bootstrapped driver but rather a simple clamp to protect the gate oxide and a pull-down circuit or driver. P-channel MOSFETs have been popular in lower-power high-side switches, hot swap applications on the positive rail, electronic relays, electronic circuit breakers and general DC switching.